CLY5

Forward Transconductance gFS (Max / Min) :
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Technology Type : HEMT
Frequency : 1.8 GHz
Gain : 9.5 dB
Noise Figure : 1.72 dB
Drain Source Voltage VDS : 9 V
Gate-Source Breakdown Voltage : - 6 V
Continuous Drain Current : 1 A
Power Dissipation : 2 W
Package / Case : SOT-223


Features:

* Power amplifier for mobile phones
* For frequencies from 400 MHz to 2.5 GHz
* Wide operating voltage range: 2.7 to 6 V
* POUT at VD=3V, f=1.8GHz typ. 26.5 dBm
* High efficiency better 55 %


Pinout




Specifications

	Symbol		Unit
Drain-source voltage	VDS	9	V
Drain-gate voltage	VDG	12	V
Gate-source voltage	VGS	-6	V
Drain current	ID	1.2	A
Channel temperature	TCh	150
Storage temperature	Tstg	-55...+150
Pulse peak power	PPulse	9	W
Total power dissipation (Ts < 80 °C) Ts: Temperature at soldering point	Ptot	2	W

Parameters:

Technical/Catalog Information	CLY5
Vendor	Triquint Semiconductor Inc
Category	Discrete Semiconductor Products
Transistor Type	FET
Voltage - Rated	9V
Current Rating	1.2A
Package / Case	SOT-223 (3 leads + Tab), SC-73, TO-261AA
Packaging	Tape & Reel (TR)
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	CLY5 CLY5 779 1007 2 ND 77910072ND 779-1007-2