CM100DUS-12F

Voltage - Collector Emitter Breakdown (Max): 600V
Input: Standard
NTC Thermistor: No
Mounting Type: Chassis Mount
Current - Collector (Ic) (Max): 100A
Configuration: Half Bridge
Series: IGBTMOD™
Manufacturer: Powerex Inc
Current - Collector Cutoff (Max): 1mA
Package / Case: Module
Supplier Device Package: Module
IGBT Type: Trench
Power - Max: 350W
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 100A
Input Capacitance (Cies) @ Vce: 27nF @ 10V


Description

CM100DUS-12F is one of Mitsubishi IGBT Modules which are designed for the application in high power switching use.

There are some maximum ratings about CM100DUS-12F(Tj = 25 °C unless otherwise specified).junction temperature(Tj) is40°C to 150°C.Storage Temperature (Tstg ) is40°C to 125 °C.Collector-Emitter Voltage (G-E SHORT)(VCES) is 600 Volts.Gate-Emitter Voltage (C-E SHORT)(VGES) is ±20 Volts.Collector Current (TC = 25°C)(IC) is 100 Amperes.Peak Collector Current(ICM) is 200 Amperes.Emitter Current** (TC = 25°C)(IE) is 100 Amperes.Weight is 310 Grams.Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)(Viso) is 2500 V.Otherwise,there are also some eletrical charactersitics(Tj is 25).Collector cutoff current(ICES) is 1 mA max when VCE is equal to VCES and VGE is 0 V.Gate-emitter threshold voltage(VGE(th)) is 5 V min, 6 V typ and 7 V max when Ic is 10 mA and VCE is 10 V. Gate leakage current(IGES) is 20 uA max when VGE is equal to VCES and VCE is 0 V.Input capacitance(Cies) is 27 nF max when VCE is 10 V and VGE is 0 V.Output capacitance(Coes) is 1.8 pF max when VCE is 10 V and VGE is 0 V.Total gate chrage(QG) is 620 nC typ when Vcc is 300 V , Ic is 100 A and VGE is 15 V .

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Parameters:

Technical/Catalog Information	CM100DUS-12F
Vendor	Powerex Inc
Category	Discrete Semiconductor Products
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	CM100DUS 12F CM100DUS12F