CM350DU-5F

Features:

·Low Drive Power
·Low V_CE(sat)
·Discrete Super-Fast Recovery Free-Wheel Diode
·High Frequency Operation (15-20kHz)
·Isolated Baseplate for Easy Heat Sinking




Application

·DC Motor Control
·Boost Regulator




Specifications

Ratings	Symbol	CM900HB-90H	Units
Junction Temperature	Tj	-40 to 150	°C
Storage Temperature	Tstg	-40 to 125	°C
Collector-Emitter Voltage (G-E SHORT)	VCES	250	Volts
Gate-Emitter Voltage(G-E SHORT)	VGES	±20	Volts
Collector Current (Tc = 25°C)	IC	350	Amperes
Peak Collector Current(Tj 125°C)	ICM	750*	Amperes
Emitter Current** (TC = 25°C)	IE	350	Amperes
Peak Emitter Current**	IEM	750*	Amperes
Maximum Collector Dissipation (Tc = 25°C)	Pc	960	Watts
Mounting Torque, M6 Main Terminal	-	26	in-lb
Mounting Torque, M6 Mounting	-	26	in-lb
Weight	-	520	Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)	Viso	2500	Vrms

Description

Powerex IGBTMOD^TM Modules CM350DU-5F are designed for use in switching applications. Each module con- sists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse- connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assem- bly and thermal management.