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CMLD4448DO

Specifications SYMBOL UNITS Peak Repetitive Reverse Voltage VRRM 120 V Continuous Forward Current IF 250 mA Peak Repetitive Forward Current IFRM 500 mA Forward Surge Current, tp=1ms IFSM 4.0 A Forward Surge Current, tp=1s IFSM 1.0 A Power Dissipation PD ...

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CMLD4448DO: Specifications SYMBOL UNITS Peak Repetitive Reverse Voltage VRRM 120 V Continuous Forward Current IF 250 mA Peak Repetitive Forward Current IFRM 500 mA Forward Surge C...

CMLD4448DO Data Sheet

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Part Number:
CMLD4448DO
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

  SYMBOL   UNITS
Peak Repetitive Reverse Voltage VRRM 120 V
Continuous Forward Current IF 250 mA
Peak Repetitive Forward Current IFRM 500 mA
Forward Surge Current, tp=1ms IFSM 4.0 A
Forward Surge Current, tp=1s IFSM 1.0 A
Power Dissipation PD 300 mW
Operating and Storage      
Junction Temperature TJ,Tstg -65 to +150 °C
Thermal Resistance JA 417 °C/W



Description

The CENTRAL SEMICONDUCTOR CMLD4448DO type contains two (2) Isolated Opposing Configuration, Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a PICOmini™ surface mount package. These devices are designed for high speed switching applications.


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