CMLT2907A

Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : PNP
Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V
Maximum Operating Frequency : 200 MHz
Configuration : Dual
Package / Case : SOT-563
Maximum DC Collector Current : 0.6 A
DC Collector/Base Gain hfe Min : 75 at 0.1 mA at 10 V


Pinout




Specifications

	SYMBOL		UNITS
Collector-Base Voltage	VCBO	60	V
Collector-Emitter Voltage	VCEO	60	V
Emitter-Base Voltage	VEBO	5.0	V
Collector Current	IC	600	mA
Power Dissipation	PD	350	mW
Operating and Storage
Junction Temperature	TJ,Tstg	-65 to +150	°C
Thermal Resistance	JA	357	°C/W

Description

The CENTRAL SEMICONDUCTOR CMLT2907A consists of two individual, isolated 2907A PNP silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface mount package. This PICOmini^TM devices has been designed for small signal general purpose and switching applications.