CMLT3906E

Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : 6 V
Configuration : Dual
Maximum Operating Frequency : 300 MHz
Collector- Emitter Voltage VCEO Max : 40 V
Maximum DC Collector Current : 0.2 A
Package / Case : SOT-563
DC Collector/Base Gain hfe Min : 90 at 0.1 mA at 1 V


Pinout

LEAD CODE:
1) EMITTER Q1
2) BASE Q1
3) COLLECTOR Q2
4) EMITTER Q2
5) BASE Q2
6) COLLECTOR Q1

Specifications

	SYMBOL		UNITS
Collector-Base Voltage	VCBO	60	V
Collector-Emitter Voltage	VCEO	40	V
Emitter-Base Voltage	VEBO	6.0	V
Collector Current	IC	200	mA
Power Dissipation	PD	350	mW (Note 1)
Power Dissipation	PD	300	mW (Note 2)
Power Dissipation	PD	150	mW (Note 3)
Operating and Storage
Junction Temperature	TJ,Tstg	-65 to +150	°C
Thermal Resistance	JA	357	°C/W

Description

The Central Semiconductor CMLT3904E (two single NPN), CMLT3906E (two single PNP), and CMLT3946E (one each NPN and PNP complementary) are combinations of enhanced specification transistors in a space saving SOT-563 package, designed for small signal general purpose amplifier and switching applications.