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Specifications SYMBOL UNITS Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 7.0 V Collector Current IC 500 A Collector Current(Peak) ICM 1.0 A Power Dissipation PD 350 mW Operating and Storage ...

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SeekIC No. : 004314846 Detail

CMPT3019: Specifications SYMBOL UNITS Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 7.0 V Collector Current IC 500 A Coll...

CMPT3019 Data Sheet

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Part Number:: CMPT3019
Supply Ability:: 5000

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Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2025/12/5

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Specifications SYMBOL UNITS Collector-Base Voltage VCBO 40 V Collector-Emitter ...

Product Details

Description

Specifications

	SYMBOL		UNITS
Collector-Base Voltage	V_CBO	120	V
Collector-Emitter Voltage	V_CEO	80	V
Emitter-Base Voltage	V_EBO	7.0	V
Collector Current	I_C	500	A
Collector Current(Peak)	I_CM	1.0	A
Power Dissipation	P_D	350	mW
Operating and Storage
Junction Temperature	T_J,T_stg	-65 to +150	°C
Thermal Resistance	_JA	357	°C/W

Description

The CENTRAL SEMICONDUCTOR CMPT3019 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for very high current, general purpose amplifier applications.

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CMPT3019

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