CMPT591E

Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : PNP
Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V
Package / Case : SOT-23
Maximum DC Collector Current : 1 A
Maximum Operating Frequency : 150 MHz
DC Collector/Base Gain hfe Min : 200 at 1 mA at 5 V


Specifications

	SYMBOL		UNITS
Collector-Base Voltage	VCBO	80	V
Collector-Emitter Voltage	VCEO	60	V
Emitter-Base Voltage	VEBO	5.0	V
Collector Current	IC	1.0	A
Base Current	IB	200	mA
Collector Current (Peak)	ICM	2.0	A
Power Dissipation	PD	350	mW
Operating and Storage
Junction Temperature	TJ,Tstg	-65 to +150	°C
Thermal Resistance	JA	357	°C/W

Description

The CENTRAL SEMICONDUCTOR CMPT591E type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current, general purpose amplifier applications.