CNY65

Minimum Operating Temperature : - 55 C
Package / Case : DIP-4
Packaging : Tube
Maximum Collector Emitter Voltage : 32 V
Maximum Collector Emitter Saturation Voltage : 0.3 V
Isolation Voltage : 8200 Vrms
Maximum Forward Diode Voltage : 1.6 V
Maximum Collector Current : 50 mA
Maximum Power Dissipation : 250 mW
Maximum Operating Temperature : + 85 C
Input Type : DC
Current Transfer Ratio : 50 % to 300 %


Features:

• Rated isolation voltage (RMS includes DC) V_IOWM = 1000 V_RMS (1450 V peak)
• Rated recurring peak voltage (repetitive) V_IORM = 1000 V_RMS
• Thickness through insulation 3 mm
• Creepage current resistance according to VDE 0303/IEC 60112 Comparative Tracking Index: CTI 200
• Lead-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Application

Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):
For appl. class I - IV at mains voltage 300 V
For appl. class I - IV at mains voltage 600 V
For appl. class I - III at mains voltage 1000 V according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-
5-5 pending, table 2, suitable for: Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface.

Specifications

Parameter	Test condition	Symbol	Value	Unit
Reverse voltage		VR	5	V
Forward current		IF	75	mA
Forward surge current	tp 10 s	IFSM	1.5	A
Power dissipation		Pdiss	120	mW
Junction temperature		Tj	100	°C

Parameter	Test condition	Symbol	Value	Unit
Collector emitter voltage		VCEO	32	V
Emitter collector voltage		VECO	7	V
Collector current		IC	50	mA
Collector peak current	tp/T = 0.5, tp 10 ms	ICM	100	mA
Power dissipation		Pdiss	130	mW
Junction temperature		Tj	100	°C

Parameter	Test condition	Symbol	Value	Unit
AC isolation test voltage (RMS)	t = 1 min	VISO	8.2	kV
Total power dissipation		Ptot	250	mW
Ambient temperature range		Tamb	- 55 to + 85	°C
Storage temperature range		Tstg	- 55 to + 100	°C
Soldering temperature	2 mm from case, t 10 s	Tsld	260	°C

Description

Optocoupler, Phototransistor Output, Very High Isolation Voltage

The CNY64/ CNY65/ CNY66 consist of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 4-pin plastic package.

CNY65 single components are mounted opposite one another, providing a distance between input and output for highest safety requirements of > 3 mm.