CNY65EXI

Minimum Operating Temperature : - 55 C
Package / Case : DIP-4
Packaging : Tube
Maximum Collector Emitter Voltage : 32 V
Maximum Collector Emitter Saturation Voltage : 0.3 V
Maximum Forward Diode Voltage : 1.6 V
Maximum Collector Current : 50 mA
Maximum Power Dissipation : 250 mW
Maximum Operating Temperature : + 85 C
Input Type : DC
Current Transfer Ratio : 50 % to 300 %
Isolation Voltage : 11600 KVrms


Features:

`Suitable for intrinsic safety circuits according to test certificate No. Ex-81/2158 of PTB
`Isolation material according to UL94 VO flammability class
`Low temperature coefficient of CTR
`Creepage current resistance of isolation material according to VDE 0303/DIN 53480: KC . 475
`Isolation test voltage 11.6 kV
`Test class 25/100/21 DIN 40045
`Very low coupling capacity of typical 0.3 pF therefore high noise voltage resistant
`Current Transfer Ratio (CTR) = 50 to 300%
`Coupling System J


Application

Galvanically separated circuits, suitable for intrinsic
safety circuits
Electrical apparatus used in a potentially explosive
atmosphere:
EN 50014-1977/VDE 0171 Part 1/5.78
General instructions
EN 50020-1977/VDE 0171 Part 7/5.78
Intrinsic safety 'i' section: 5.5, 5.5.4, 5.7


Pinout

Parameter	Test Conditions	Symbol	Value	Unit
Reverse voltage		VR	5	V
Forward Current		IF	75	mA
Forward surge current	tp 10s	IFSM	1.5	A
Power dissipation	Tamb 25	PV	120	mW
Junction temperature		Tj	100

Specifications

Parameter	Test Conditions	Symbol	Value	Unit
Reverse voltage		VR	5	V
Forward Current		IF	75	mA
Forward surge current	tp 10s	IFSM	1.5	A
Power dissipation	Tamb 25	PV	120	mW
Junction temperature		Tj	100

Description

The CNY65Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package.

CNY65EXIT single components are mounted in opposite oneanother, providing a distance between input and output for highest safety requirements of > 3 mm.