CPC5602C

MOSFET MOSFET N-CHANNEL 350V

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SeekIC No. : 00151085 Detail

CPC5602C: MOSFET MOSFET N-CHANNEL 350V

floor Price/Ceiling Price

Part Number:
CPC5602C
Mfg:
Clare
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 350 V
Gate-Source Breakdown Voltage : + / - 20 V Continuous Drain Current : 5 mA
Resistance Drain-Source RDS (on) : 14 Ohms Configuration : Single Dual Drain
Maximum Operating Temperature : + 85 C Mounting Style : SMD/SMT
Package / Case : SOT-223 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Tube
Maximum Operating Temperature : + 85 C
Package / Case : SOT-223
Configuration : Single Dual Drain
Drain-Source Breakdown Voltage : 350 V
Gate-Source Breakdown Voltage : + / - 20 V
Continuous Drain Current : 5 mA
Resistance Drain-Source RDS (on) : 14 Ohms


Features:

• Low on resistance 10 ohms
• High input impedance
• Low input and output leakage
• Small package size SOT-223
• PC Card (PCMCIA) Compatible
• PCB Space and Cost Savings



Application

• Support Component for LITELINK TM Data Access Arrangement (DAA)
• Normally-on switch
• Telecom
• Constant Current Source



Pinout

  Connection Diagram


Specifications

Parameter Minimum Maximum Unit
VDSS Voltage - 350 V
Total Package Power Dissipation - 2.5 W
Operating temperature -40 +85 °C
Storage temperature -40 +125 °C
Soldering temperature - +220 °C



Description

The CPC5602C is an "N" channel depletion mode Field Effect Transistor (FET) that utilizes Clare's proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a highly reliable device particularly in difficult application environments such as telecommunications.

One of the primary applications for the CPC5602C is as a linear regulator/ hook switch for the LITELINKTM Data Access Arrangements (DAA) Devices (CPC5610A, CPC5611A, CPC5604A).

The CPC5602C has a typical on-resistance of 8, a breakdown voltage exceeding 350V and is available in an SOT-223 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown.




Parameters:

Technical/Catalog InformationCPC5602C
VendorClare
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)350V
Current - Continuous Drain (Id) @ 25° C5mA
Rds On (Max) @ Id, Vgs14 Ohm @ 50mA, 350mV
Input Capacitance (Ciss) @ Vds 300pF @ 0V
Power - Max2.5W
PackagingTube
Gate Charge (Qg) @ Vgs-
Package / CaseSOT-223, SC-73, TO-261 (3 Leads + Tab)
FET FeatureDepletion Mode
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names CPC5602C
CPC5602C



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