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CPH6429-TL-E

MOSFET N-CH 60V 2A CPH6

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SeekIC No. : 003433735 Detail

CPH6429-TL-E: MOSFET N-CH 60V 2A CPH6

CPH6429-TL-E Data Sheet

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Part Number:
CPH6429-TL-E
Mfg:
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/17

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Product Details

Quick Details

Series: - Manufacturer: SANYO Semiconductor (U.S.A) Corporation
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 15.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 2A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 220 mOhm @ 1A, 4V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: - Gate Charge (Qg) @ Vgs: 4.2nC @ 4V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 325pF @ 20V
Power - Max: 1.6W Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-CPH    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25° C: 2A
Power - Max: 1.6W
Vgs(th) (Max) @ Id: -
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-CPH
Manufacturer: SANYO Semiconductor (U.S.A) Corporation
Rds On (Max) @ Id, Vgs: 220 mOhm @ 1A, 4V
Gate Charge (Qg) @ Vgs: 4.2nC @ 4V
Input Capacitance (Ciss) @ Vds: 325pF @ 20V


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