CQY80N

Isolation Voltage : 5000 Vrms
Minimum Operating Temperature : - 55 C
Packaging : Tube
Maximum Operating Temperature : + 100 C
Maximum Collector Emitter Voltage : 32 V
Maximum Collector Emitter Saturation Voltage : 0.3 V
Maximum Forward Diode Voltage : 1.6 V
Maximum Collector Current : 50 mA
Maximum Power Dissipation : 250 mW
Input Type : DC
Package / Case : PDIP-6
Current Transfer Ratio : 90 %


Features:

BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402
FIMKO (SETI): EN 60950, Certificate number 12399
Underwriters Laboratory (UL) 1577 recognized, file number E-76222
VDE 0884, Certificate number 94778




Application

Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):
For appl. class I IV at mains voltage 3 300 V
For appl. class I III at mains voltage 3 600 V
according to VDE 0884, table 2, suitable for: Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface.




Specifications

Parameter	Test Conditions	Symbol	Value	Unit
Reverse voltage		VR	5	V
Forward current		IF	60	mA
Forward surge current	tp 3 10 s	IFSM	1.5	A
Power dissipation	Tamb 3 25	PV	100	mW
Junction temperature		Tj	125

Description

The CQY80N(G) series consist of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual inline package.
The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.