MOSFET N-Channel NexFET Power MOSFET
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 25 V | ||
| Gate-Source Breakdown Voltage : | - 8 V, + 10 V | Continuous Drain Current : | 31 A | ||
| Resistance Drain-Source RDS (on) : | 0.0024 Ohms | Configuration : | Single Quad Drain Triple Source | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | SON-8 | Packaging : | Reel |
| Technical/Catalog Information | CSD16321Q5 |
| Vendor | Texas Instruments |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25° C | 100A |
| Rds On (Max) @ Id, Vgs | 2.4 mOhm @ 25A, 8V |
| Input Capacitance (Ciss) @ Vds | 3100pF @ 12.5V |
| Power - Max | 3.1W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 19nC @ 4.5V |
| Package / Case | 8-QFN |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | CSD16321Q5 CSD16321Q5 296 24517 2 ND 296245172ND 296-24517-2 |