CSD16323Q3, US $ .51-.77 , Texas Instruments, CSD16323Q3 DataSheet download, circuit diagram from SeekIC.com

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CSD16323Q3: MOSFET N-Ch NexFET Pwr MOSFET

CSD16323Q3 Data Sheet

US $ .51~.77 / Piece | Get Latest Price

Part Number:: CSD16323Q3
Mfg:: Texas Instruments
Supply Ability:: 5000

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Product Details

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	25 V
Gate-Source Breakdown Voltage :	- 8 V, + 10 V	Continuous Drain Current :	21 A
Resistance Drain-Source RDS (on) :	0.0045 Ohms	Configuration :	Single Quad Drain Triple Source
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SON-8	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 25 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 21 A
Package / Case : SON-8
Gate-Source Breakdown Voltage : - 8 V, + 10 V
Resistance Drain-Source RDS (on) : 0.0045 Ohms

Parameters:

Technical/Catalog Information	CSD16323Q3
Vendor	Texas Instruments (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25° C	60A
Rds On (Max) @ Id, Vgs	4.5 mOhm @ 24A, 8V
Input Capacitance (Ciss) @ Vds	1300pF @ 12.5V
Power - Max	3W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	8.4nC @ 4.5V
Package / Case	8-SON
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	CSD16323Q3 CSD16323Q3 296 24522 1 ND 296245221ND 296-24522-1

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CSD16323Q3

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