MOSFET N-Ch NexFET Power MOSFETs
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 25 V | ||
| Gate-Source Breakdown Voltage : | - 12 V, + 16 V | Continuous Drain Current : | 100 A | ||
| Resistance Drain-Source RDS (on) : | 1.8 m Ohms | Configuration : | Single Quad Drain Triple Source | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | QFN-8 | Packaging : | Reel |
| Technical/Catalog Information | CSD16407Q5 |
| Vendor | Texas Instruments (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25° C | 31A |
| Rds On (Max) @ Id, Vgs | 2.4 mOhm @ 25A, 10V |
| Input Capacitance (Ciss) @ Vds | 2660pF @ 12.5V |
| Power - Max | 3.1W |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 18nC @ 4.5V |
| Package / Case | 8-QFN |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | CSD16407Q5 CSD16407Q5 296 24252 6 ND 296242526ND 296-24252-6 |