CSD16409Q3, US $ .4-.62 , Texas Instruments, CSD16409Q3 DataSheet download, circuit diagram from SeekIC.com

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CSD16409Q3: MOSFET N-Ch NexFET Power MOSFETs

CSD16409Q3 Data Sheet

US $ .4~.62 / Piece | Get Latest Price

Part Number:: CSD16409Q3
Mfg:: Texas Instruments
Supply Ability:: 5000

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	25 V
Gate-Source Breakdown Voltage :	- 12 V, + 16 V	Continuous Drain Current :	60 A
Resistance Drain-Source RDS (on) :	6.2 m Ohms	Configuration :	Single Quad Drain Triple Source
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	QFN-8	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 25 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : - 12 V, + 16 V
Configuration : Single Quad Drain Triple Source
Package / Case : QFN-8
Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 6.2 m Ohms

Parameters:

Technical/Catalog Information	CSD16409Q3
Vendor	Texas Instruments (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25° C	60A
Rds On (Max) @ Id, Vgs	8.2 mOhm @ 17A, 10V
Input Capacitance (Ciss) @ Vds	800pF @ 12.5V
Power - Max	2.6W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	5.6nC @ 4.5V
Package / Case	8-QFN
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	CSD16409Q3 CSD16409Q3 296 24253 6 ND 296242536ND 296-24253-6

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CSD16409Q3

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