MOSFET P-Ch NexFET Power MOSFETs
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| Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 20 V | ||
| Gate-Source Breakdown Voltage : | +/- 12 V | Continuous Drain Current : | 14 A | ||
| Resistance Drain-Source RDS (on) : | 0.0117 Ohms | Configuration : | Single Quad Source Triple Drain | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | SON-8 | Packaging : | Reel |
| Technical/Catalog Information | CSD25401Q3 |
| Vendor | Texas Instruments (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 13.6A |
| Rds On (Max) @ Id, Vgs | 11.5 mOhm @ 10A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 1400pF @ 10V |
| Power - Max | 2.8W |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 12.3nC @ 10V |
| Package / Case | 8-QFN |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | CSD25401Q3 CSD25401Q3 296 24260 6 ND 296242606ND 296-24260-6 |