Purchase CXK58512TM, In-stock CXK58512TM From SeekIC.
Part Number: CXK58512TM
Description: The CXK58512TM/M is a high speed CMOS static RAM organized as 65536-words by 8 bits. A polysilicon TFT cell technology ...
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CXK58512TM
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General Description
CXK58512TM General Description
The CXK58512TM/M is a high speed CMOS static RAM organized as 65536-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability.
Special feature are low power consumption, high speed.
The CXK58512TM/M is a suitable RAM for portable equipment with battery back up.
CXK58512TM Maximum Ratings
| Item | Symbol | Rating | Unit |
| Supply voltage | VCC | 0.5 to +4.6 | V |
| Input voltage | VIN | 0.5*1 to VCC + 0.5 | V |
| Input and output voltage | VI/O | 0.5*1 to VCC + 0.5 | V |
| Allowable power dissipation | PD | 0.7 | W |
| Operating temperature | Topr | 0 to +70 | °C |
| Storage temperature | Tstg | 55 to +150 | °C |
| Soldering temperature ` time | Tsolder | 235 ` 10 | °C ` s |
CXK58512TM Features
• Fast access time (Access time)
-55LL 55ns (Max.)
-70LL 70ns (Max.)
-10LL 100ns (Max.)
• Low standby current 10µA (Max.)
• Low data retention current 6µA (Max.)
• Single +5V supply: +5V ± 10%
• Low voltage data retention: 2.0V (Min.)
• Broad package line-up
CXK58512TM 8mm ×20mm 32 pin TSOP package
CXK58512M 525mil 32 pin SOP Package
-55LL 55ns (Max.)
-70LL 70ns (Max.)
-10LL 100ns (Max.)
• Low standby current 10µA (Max.)
• Low data retention current 6µA (Max.)
• Single +5V supply: +5V ± 10%
• Low voltage data retention: 2.0V (Min.)
• Broad package line-up
CXK58512TM 8mm ×20mm 32 pin TSOP package
CXK58512M 525mil 32 pin SOP Package
CXK58512TM Connection Diagram
CXK58512TM
PDF/DataSheet Download
- Datasheet: CXK58512TM
- File Size: 215573 KB
- Manufacturer: SONY [Sony Corporation]
- Click here to Download
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