CXK591000M

Features:

• Fast access time
CXK591000TM/YM/M (Access time)
-55LL 55ns (Max.)
-70LL 70ns (Max.)
-10LL 100ns (Max.)
• Low standby current
CXK591000TM/YM/M
-55LL/70LL/10LL 24µA (Max.)
• Low data retention current
CXK591000TM/YM/M
-55LL/70LL/10LL 14µA (Max.)
• Single +5V supply: 5V ± 10%.
• Low voltage date retention: 2.0V (Min.)
• Broad package line-up
CXK591000TM/YM
8mm ×20mm 32 pin TSOP Package
CXK591000M 525mil 32 pin SOP


Pinout

Specifications

Item	Symbol	Rating	Unit
Supply voltage	VCC	0.5 to +7.0	V
Input voltage	VIN	0.5* to VCC + 0.5	V
Output voltage	VI/O	0.5* to VCC + 0.5	V
Allowable power dissipation	PD	0.7	W
operating temperature	Topr	0 to 70	°C
Strorage temperature	Tstg	55 to +150	°C
Soldering temperature ` time	Tsolder	235 ` 10	°C ` s

Description

The CXK591000M is a high speed CMOS static RAM organized as 131,072-words by 9 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability.

Special feature are low power consumption and high speed.

The CXK591000M is a suitable RAM for portable equipment with battery back up and parity bit.