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Part Number: CXK5T81000AM

 

 

 

 

Description: The CXK5T81000ATM/AYM/AM is a high speed CMOS static RAM organized as 131072-words by 8-bits.Special feature ar...


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CXK5T81000AM General Description


The CXK5T81000ATM/AYM/AM is a high speed CMOS static RAM organized as 131072-words by 8-bits.

Special feature are low power consumption and high speed.

The CXK5T81000ATM/AYM/AM is a suitable RAM for portable equipment with battery back up.

CXK5T81000AM Maximum Ratings

Item Symbol Rating Unit
Supply voltage VCC 0.5 to +4.6 V
Input voltage VIN 0.5*1 to VCC + 0.5 V
Input and output voltage VI/O 0.5*1 to VCC + 0.5 V
Allowable power dissipation PD 0.7 W
Operating temperature Topr 0 to +70 °C
Storage temperature Tstg 55 to +150 °C
Soldering temperature ` time Tsolder 235 ` 10 °C ` s

CXK5T81000AM Features

• Extended operating temperature range:
  25 to +85°C
• Wide supply voltage range operation: 2.7 to 3.6V
• Fast access time:
  (Access time)
  3.0V operation -10LLX 100ns (Max.)
  -12LLX 120ns (Max.)
  3.3V operation -10LLX 85ns (Max.)
  -12LLX 100ns (Max.)
• Low standby current: 28µA (Max.)
• Low data retention current: 24µA (Max.)
• Low voltage data retention: 2.0V (Min.)
• Package line-up
  CXK5T81000ATM/AYM
  8mm *20mm 32 pin TSOP package
  CXK5T81000AM
  525mil 32 pin SOP package

CXK5T81000AM Connection Diagram

CXK5T81000AM  Connection Diagram

CXK5T81000AM datasheet

CXK5T81000AM
PDF/DataSheet Download

Find CXK5T81000AM Suppliers

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  • ·CXK581000AM-10LL
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  • ·CXK581000AM-10SL
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  • ·CXK581000AM-55LL
  • SONY [Sony Corporation] 
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  • CXK581000AM-55LL Datasheet Download
  • ·CXK581000AM-55SL
  • SONY [Sony Corporation] 
  • 131072-word x 8-bit High Speed CMOS Static RAM 
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  • CXK581000AM-55SL Datasheet Download

CXK5T81000AM Relative Products

  • CXK5T16100TM

    CXK5T16100TM

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  • CXK5B81020J

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    CXK5B81020J/TM is a high speed 1M bit Bi-CMOS static RAM organized as 131072 words by 8 bits. Operating on a single 3.3V supply this asynchronous IC is suitable for use in high speed and low power applications.

  • CXK5B41020TM-12

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  • CXK5B18120TM-12

    CXK5B18120TM-12

    CXK5B18120TM-12 is a high speed 1M bit Bi-CMOS static RAM organized as 65536 words by 18 bits. Operating on a single 3.3V supply this asynchronous IC is suitable for use in high speed and low power applications.

  • CXK5B16120TM

    CXK5B16120TM

    CXK5B16120TM is a high speed 1M bit Bi-CMOS static RAM organized as 65536 words by 16 bits. Operating on a single 3.3V supply this asynchronous IC is suitable for use in high speed and low power applications.

  • CXK5B16120J

    CXK5B16120J

    CXK5B16120J/TM is a high speed 1M bit Bi-CMOS static RAM organized as 65536 words by 16 bits. Operating on a single 3.3V supply this asynchronous IC is suitable for use in high speed and low power applications.

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