Purchase CXK5T81000AYN-12LLX, In-stock CXK5T81000AYN-12LLX From SeekIC.
Part Number: CXK5T81000AYN-12LLX
Description: The CXK5T81000ATN/AYN is a high speed CMOS static RAM organized as 131072-words by 8-bits.Special feature are l...
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CXK5T81000AYN-12LLX
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General Description
CXK5T81000AYN-12LLX General Description
The CXK5T81000ATN/AYN is a high speed CMOS static RAM organized as 131072-words by 8-bits.
Special feature are low power consumption and high speed.
The CXK5T81000ATN/AYN is a suitable RAM for portable equipment with battery back up.
CXK5T81000AYN-12LLX Maximum Ratings
| Item | Symbol | Rating | Unit |
| Supply voltage | VCC | 0.5 to +4.6 | V |
| Input voltage | VIN | 0.5*1 to VCC + 0.5 | V |
| Input and output voltage | VI/O | 0.5*1 to VCC + 0.5 | V |
| Allowable power dissipation | PD | 0.7 | W |
| Operating temperature | Topr | 25 to +85 | °C |
| Storage temperature | Tstg | 55 to +150 | °C |
| Soldering temperature ` time | Tsolder | 235 ` 10 | °C ` s |
CXK5T81000AYN-12LLX Features
• Extended operating temperature range:
25 to +85°C
• Wide supply voltage range operation: 2.7 to 3.6V
• Fast access time: (Access time)
3.0V operation -10LLX 100ns (Max.)
-12LLX 120ns (Max.)
3.3V operation -10LLX 85ns (Max.)
-12LLX 100ns (Max.)
• Low standby current: 28µA (Max.)
• Low data retention current: 24µA (Max.)
• Low power data retention: 2.0V (Min.)
• Package 8mm * 13.4mm 32 pin TSOP package
25 to +85°C
• Wide supply voltage range operation: 2.7 to 3.6V
• Fast access time: (Access time)
3.0V operation -10LLX 100ns (Max.)
-12LLX 120ns (Max.)
3.3V operation -10LLX 85ns (Max.)
-12LLX 100ns (Max.)
• Low standby current: 28µA (Max.)
• Low data retention current: 24µA (Max.)
• Low power data retention: 2.0V (Min.)
• Package 8mm * 13.4mm 32 pin TSOP package
CXK5T81000AYN-12LLX Connection Diagram
CXK5T81000AYN-12LLX
PDF/DataSheet Download
- Datasheet: CXK5T81000AYN-12LLX
- File Size: 240935 KB
- Manufacturer: SONY [Sony Corporation]
- Click here to Download
- ·CXK1012
- SONY [Sony Corporation]
- 1024-BIT (128WORD X 8 BIT) NON-VOLATILE MEMORY
- 484995 KB
- ·CXK1012P
- SONY [Sony Corporation]
- 1024-BIT (128WORD X 8 BIT) NON-VOLATILE MEMORY
- 484995 KB
- ·CXK1024P
- ETC [ETC]
- MNOS 2K (256 X 8)-BIT NON-VOLATILE MEMORY
- 15470 KB
- ·CXK581000AM
- SONY [Sony Corporation]
- 131072-word x 8-bit High Speed CMOS Static RAM
- 295815 KB
- ·CXK581000AM-10LL
- SONY [Sony Corporation]
- 131072-word x 8-bit High Speed CMOS Static RAM
- 295815 KB
- ·CXK581000AM-10SL
- SONY [Sony Corporation]
- 131072-word x 8-bit High Speed CMOS Static RAM
- 295815 KB
- ·CXK581000AM-55LL
- SONY [Sony Corporation]
- 131072-word x 8-bit High Speed CMOS Static RAM
- 295815 KB
- ·CXK581000AM-55SL
- SONY [Sony Corporation]
- 131072-word x 8-bit High Speed CMOS Static RAM
- 295815 KB
CXK5T81000AYN-12LLX Relative Products
CXK5T81000AYM
The CXK5T81000AYM is a high speed CMOS static RAM organized as 131072-words by 8-bits.Special feature are low power consumption and high speed.The CXK5T81000AYM is a suitable RAM for portable equipment with battery back up.
CXK5T81000ATN-10LLX/
The CXK5T81000ATN-10LLX/ is a high speed CMOS static RAM organized as 131072-words by 8-bits.Special feature are low power consumption and high speed.The CXK5T81000ATN-10LLX/ is a suitable RAM for portable equipment with battery back up.
CXK5T81000ATM
The CXK5T81000ATM/AYM/AM is a high speed CMOS static RAM organized as 131072-words by 8-bits.Special feature are low power consumption and high speed.The CXK5T81000ATM/AYM/AM is a suitable RAM for portable equipment with battery back up.
CXK5T81000AM
The CXK5T81000AM is a high speed CMOS static RAM organized as 131072-words by 8-bits.Special feature are low power consumption and high speed.The CXK5T81000AM is a suitable RAM for portable equipment with battery back up.
CXK5T16100TM
The CXK5T16100TM is a general purpose high speed CMOS static RAM organized as 65536-words by 16-bits.Special feature are low power consumption and high speed.The CXK5T16100TM is a suitable RAM for portable equipment with battery back up.
CXK5B81020J
CXK5B81020J/TM is a high speed 1M bit Bi-CMOS static RAM organized as 131072 words by 8 bits. Operating on a single 3.3V supply this asynchronous IC is suitable for use in high speed and low power applications.
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