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Part Number: CXK5V81000ATM

 

 

 

 

Description: The CXK5V81000ATM is a high speed CMOS static RAM organized as 131072-words by 8-bits.A polysilicon TFT cell techno...


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CXK5V81000ATM General Description


The CXK5V81000ATM is a high speed CMOS static RAM organized as 131072-words by 8-bits.
A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability.
Operating on a single 3.3V supply, and special feature are low power consumption, high speed.
The CXK5V81000ATM is a suitable RAM for portable equipment with battery back up.

CXK5V81000ATM Maximum Ratings

Item Symbol Rating Unit
Supply voltage VCC 0.5 to +4.6 V
Input voltage VIN 0.5* to VCC +0.5
Input and output voltage VI/O 0.5* to VCC +0.5
Allowable power dissipation PD 0.7 W
Operating temperature Topr 25 to +85 °C
Storage temperature Tstg 55 to +150
Soldering temperature Tsolder 235 • 10 °C • s

CXK5V81000ATM Features

• Extended operating temperature range:
  25 to +85°C
• Fast access time:
  (Access time)
  -85LLX 85ns (Max.)
  -10LLX 100ns (Max.)
• Low standby current: 28µA (Max.)
• Low data retention current: 24µA (Max.)
• Single 3.3V supply: 3.3V ± 0.3V
• Low voltage data retention: 2.0V (Min.)
• Package
8mm *20mm 32 pin TSOP package

CXK5V81000ATM Connection Diagram

CXK5V81000ATM  Connection Diagram

CXK5V81000ATM  Connection Diagram

CXK5V81000ATM datasheet

CXK5V81000ATM
PDF/DataSheet Download

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