CXK5V81000ATM

Features:

• Extended operating temperature range:
  25 to +85°C
• Fast access time:
  (Access time)
  -85LLX 85ns (Max.)
  -10LLX 100ns (Max.)
• Low standby current: 28µA (Max.)
• Low data retention current: 24µA (Max.)
• Single 3.3V supply: 3.3V ± 0.3V
• Low voltage data retention: 2.0V (Min.)
• Package
8mm *20mm 32 pin TSOP package


Pinout

Specifications

Item	Symbol	Rating	Unit
Supply voltage	VCC	0.5 to +4.6	V
Input voltage	VIN	0.5* to VCC +0.5
Input and output voltage	VI/O	0.5* to VCC +0.5
Allowable power dissipation	PD	0.7	W
Operating temperature	Topr	25 to +85	°C
Storage temperature	Tstg	55 to +150
Soldering temperature	Tsolder	235 • 10	°C • s

Description

The CXK5V81000ATM is a high speed CMOS static RAM organized as 131072-words by 8-bits.
A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability.
Operating on a single 3.3V supply, and special feature are low power consumption, high speed.
The CXK5V81000ATM is a suitable RAM for portable equipment with battery back up.