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CXK5V8257BM
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Part Number: CXK5V8257BM

Description: The CXK5V8257BTM/BYM/BM is 262,144 bits high speed CMOS static RAM organized as 32768-words by 8 bits.A polysil...

CXK5V8257BM General Description

The CXK5V8257BTM/BYM/BM is 262,144 bits high speed CMOS static RAM organized as 32768-words by 8 bits.

A polysilicon TFT cell technology realized extermely low stand-by current and higher data retention stability.

Operating on a single 3.3V supply, directly LVTTL compatible (All inputs and outputs).

And special feature are, low power consumption,high speed and broad package line-up.

The CXK5V8257BTM/BYM/BM is a suitable RAM for portable equipment with battery back up.

CXK5V8257BM Maximum Ratings

Item	Symbol	Rating	Unit
Supply voltage	V_CC	0.5 to +4.6	V
Input voltage	V_IN	0.5*¹ to V_CC + 0.5	V
Input and output voltage	V_I/O	0.5*¹ to V_CC + 0.5	V
Allowable power dissipation	P_D	0.7	W
Operating temperature	Topr	0 to +70	°C
Storage temperature	Tstg	55 to +150	°C
Soldering temperature ` time	Tsolder	235 ` 10	°C ` s

CXK5V8257BM Features

• Single +3.3V supply: 3.3V ±0.3V
• Directly LVTTL compatible: All inputs and outputs
• Fast access time: (Access time)
   CXK5V8257BTM/BYM/BM
   -70LL 70ns (Max.)
   -10LL 100ns (Max.)
• Low standby current:
   CXK5V8257BTM/BYM/BM
   -70LL/10LL 3.5µA (Max.)
• Low power data retention: 2.0V (Min.)
• Available in many packages
   CXK5V8257BTM/BYM 8mm×13.4mm 28 pin
   TSOP Package
   CXK5V8257BM 450mil 28 pin
   SOP Package

CXK5V8257BM Connection Diagram

CXK5V8257BM datasheet

CXK5V8257BM
PDF/DataSheet Download

Datasheet: CXK5V8257BM
File Size: 209379 KB
Manufacturer: SONY [Sony Corporation]
Click here to Download

·CXK1012
SONY [Sony Corporation]
1024-BIT (128WORD X 8 BIT) NON-VOLATILE MEMORY
484995 KB
·CXK1012P
SONY [Sony Corporation]
1024-BIT (128WORD X 8 BIT) NON-VOLATILE MEMORY
484995 KB
·CXK1024P
ETC [ETC]
MNOS 2K (256 X 8)-BIT NON-VOLATILE MEMORY
15470 KB
·CXK581000AM
SONY [Sony Corporation]
131072-word x 8-bit High Speed CMOS Static RAM
295815 KB
·CXK581000AM-10LL
SONY [Sony Corporation]
131072-word x 8-bit High Speed CMOS Static RAM
295815 KB
·CXK581000AM-10SL
SONY [Sony Corporation]
131072-word x 8-bit High Speed CMOS Static RAM
295815 KB
·CXK581000AM-55LL
SONY [Sony Corporation]
131072-word x 8-bit High Speed CMOS Static RAM
295815 KB
·CXK581000AM-55SL
SONY [Sony Corporation]
131072-word x 8-bit High Speed CMOS Static RAM
295815 KB

Related Part Number

CXK5V8257BM Relative Products

CXK5V81000ATM
The CXK5V81000ATM is a high speed CMOS static RAM organized as 131072-words by 8-bits.A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability.Operating on a single 3.3V supply, and special feature are low...
CXK5V16100TM-85LLX
CXK5V16100TM-85LLX is a general purpose high speed CMOS static RAM organized as 65536-words by 16-bits. Operating on a single 3.3V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvol...
CXK5V16100TM-10LLX
CXK5V16100TM-10LLX is a general purpose high speed CMOS static RAM organized as 65536-words by 16-bits. Operating on a single 3.3V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvol...
CXK5T8512TN
The CXK5T8512TN is a high speed CMOS static RAM organized as 65536-words by 8-bits. Special feature are low power consumption and high speed.The CXK5T8512TN is a suitable RAM for portable equipment with battery back up.
CXK5T8512TM
The CXK5T8512TM/TN is a high speed CMOS static RAM organized as 65536-words by 8-bits. Special feature are low power consumption and high speed.The CXK5T8512TM/TN is a suitable RAM for portable equipment with battery back up.
CXK5T8257BYM
The CXK5T8257BYM is 262,144 bits high speed CMOS static RAM organized as 32768-words by 8 bits.Special feature are low power consumption and high speed.The CXK5T8257BYM is a suitable RAM for portable equipment with battery back up.

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