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Part Number: CXK5V8257BYM

 

 

 

 

Description: The CXK5V8257BTM/BYM/BM is 262,144 bits high speed CMOS static RAM organized as 32768-words by 8 bits.A polysil...


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CXK5V8257BYM General Description


The CXK5V8257BTM/BYM/BM is 262,144 bits high speed CMOS static RAM organized as 32768-words by 8 bits.

A polysilicon TFT cell technology realized extermely low stand-by current and higher data retention stability.

Operating on a single 3.3V supply, directly LVTTL compatible (All inputs and outputs).

And special feature are, low power consumption,high speed and broad package line-up.

The CXK5V8257BTM/BYM/BM is a suitable RAM for portable equipment with battery back up.

CXK5V8257BYM Maximum Ratings

Item Symbol Rating Unit
Supply voltage VCC 0.5 to +4.6 V
Input voltage VIN 0.5*1 to VCC + 0.5 V
Input and output voltage VI/O 0.5*1 to VCC + 0.5 V
Allowable power dissipation PD 0.7 W
Operating temperature Topr 0 to +70 °C
Storage temperature Tstg 55 to +150 °C
Soldering temperature ` time Tsolder 235 ` 10 °C ` s

CXK5V8257BYM Features

• Single +3.3V supply: 3.3V ±0.3V
• Directly LVTTL compatible: All inputs and outputs
• Fast access time: (Access time)
   CXK5V8257BTM/BYM/BM
   -70LL 70ns (Max.)
   -10LL 100ns (Max.)
• Low standby current:
   CXK5V8257BTM/BYM/BM
   -70LL/10LL 3.5µA (Max.)
• Low power data retention: 2.0V (Min.)
• Available in many packages
   CXK5V8257BTM/BYM 8mm×13.4mm 28 pin
   TSOP Package
   CXK5V8257BM 450mil 28 pin
   SOP Package

CXK5V8257BYM Connection Diagram

CXK5V8257BYM  Connection Diagram

CXK5V8257BYM datasheet

CXK5V8257BYM
PDF/DataSheet Download

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