CXK5V8257BYM

Features:

• Single +3.3V supply: 3.3V ±0.3V
• Directly LVTTL compatible: All inputs and outputs
• Fast access time: (Access time)
   CXK5V8257BTM/BYM/BM
   -70LL 70ns (Max.)
   -10LL 100ns (Max.)
• Low standby current:
   CXK5V8257BTM/BYM/BM
   -70LL/10LL 3.5µA (Max.)
• Low power data retention: 2.0V (Min.)
• Available in many packages
   CXK5V8257BTM/BYM 8mm×13.4mm 28 pin
   TSOP Package
   CXK5V8257BM 450mil 28 pin
   SOP Package


Pinout

Specifications

Item	Symbol	Rating	Unit
Supply voltage	VCC	0.5 to +4.6	V
Input voltage	VIN	0.5*1 to VCC + 0.5	V
Input and output voltage	VI/O	0.5*1 to VCC + 0.5	V
Allowable power dissipation	PD	0.7	W
Operating temperature	Topr	0 to +70	°C
Storage temperature	Tstg	55 to +150	°C
Soldering temperature ` time	Tsolder	235 ` 10	°C ` s

Description

The CXK5V8257BYM is 262,144 bits high speed CMOS static RAM organized as 32768-words by 8 bits.

A polysilicon TFT cell technology realized extermely low stand-by current and higher data retention stability.

Operating on a single 3.3V supply, directly LVTTL compatible (All inputs and outputs).

And special feature are, low power consumption,high speed and broad package line-up.

The CXK5V8257BYM is a suitable RAM for portable equipment with battery back up.