CXK77B3611AGB

The CXK77B3611AGB is designed as one kind of high speed Bi-CMOS synchronous static RAM that integrates input registers, high speed SRAM and write buffer onto a single monolithic IC and features the delayed write system to reduce the dead cycles. Features of the CXK77B3611AGB are:(1)Inputs and outputs are GTL/HSTL compatible; (2)Controlled Impedance Driver; (3)Single 3.3V power supply: 3.3V?.15V; (4)Byte-write possible; (5)OE asynchronization; (6)JTAG test circuit; (7)Package 119TBGA; (8)4 kinds of synchronous operation mode: Register-Register mode (R-R mode), Register-Flow Thru mode (R-F mode), Register-Latch mode (R-L mode) and Dual clock mode (D-C mode).

If you want to know more information such as the electrical characteristics about the CXK77B3611AGB, please download the datasheet in www.seekic.com or www.chinaicmart.com.