CXK77K36R320GB

Features: • 3 Speed Bins Cycle Time / Access Time -3 3.0ns / 1.6ns -333.3ns / 1.6ns -44.0ns / 2.0ns• Single 2.5V power supply (VDD): 2.5V ± 5% Note: 1.8V VDD is also supported. Please contact Sony Memory Marketing Department for further information.• Dedicated output supply volta...

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CXK77K36R320GB Picture
SeekIC No. : 004318734 Detail

CXK77K36R320GB: Features: • 3 Speed Bins Cycle Time / Access Time -3 3.0ns / 1.6ns -333.3ns / 1.6ns -44.0ns / 2.0ns• Single 2.5V power supply (VDD): 2.5V ± 5% Note: 1.8V VDD is also supported. Please co...

floor Price/Ceiling Price

Part Number:
CXK77K36R320GB
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

3 Speed Bins        Cycle Time / Access Time
         -3                           3.0ns / 1.6ns
         -33                         3.3ns / 1.6ns
         -4                           4.0ns / 2.0ns
• Single 2.5V power supply (VDD): 2.5V ± 5%
   Note: 1.8V VDD is also supported. Please contact Sony Memory Marketing Department for further information.
• Dedicated output supply voltage (VDDQ): 1.5V ± 0.1V
   Note: 1.8V VDDQ is also supported. Please contact Sony Memory Marketing Department for further information.
• HSTL-compatible I/O interface with dedicated input reference voltage (VREF): 0.75V typical
• Register - Register (R-R) read protocol
• Late Write (LW) write protocol
• Full read/write coherency
• Byte Write capability
• Differential input clocks (K/K)
• Asynchronous output enable (G)
• Sleep (power down) mode via dedicated mode pin (ZZ)
• Programmable output driver impedance
• JTAG boundary scan (subset of IEEE standard 1149.1)
• 119 pin (7x17), 1.27mm pitch, 14mm x 22mm Ball Grid Array (BGA) package



Specifications

Parameter
Symbol
Rating
Units
Supply Voltage
VDD
-0.5 to +3.0
V
Output Supply Voltage
VDDQ
-0.5 to +2.3
V
Input Voltage (Address, Control, Data, Clock)
VIN
-0.5 to VDDQ + 0.5 (2.3V max)
V
Input Voltage (M1, M2)
VMIN
-0.5 to VDD + 0.5 (3.2V max)
V
Input Voltage (TCK, TMS, TDI)
VTIM
-0.5 to +3.8V
V
Operating Temperature
TA
0 to 85
Junction Temperature
TJ
0 to 110
Storage Temperature
TSTG
-55 to 150
Notes: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions other than those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.


Description

The CXK77K36R320GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 1,048,576 words by 36 bits. This synchronous SRAM integra tes input registers, high speed RAM, output registers, and a one-deep write buffer onto a single monolithic IC. Register - Register (R-R) read operations and Late Write (LW) write operations are supported, providing a high-performance user interface.

All address and control input signals except G (Output Enable) and ZZ (Sleep Mode) CXK77K36R320GB are registered on the rising edge of the K differential input clock.

During read operations CXK77K36R320GB, output data is driven valid from the rising edge of K, one full clock cycle after the address is registered.

During write operations CXK77K36R320GB, input data is registered on the rising edge of K, one full clock cycle after the address is registered.

Sleep (power down) capability is provided via the ZZ input signal.

Output drivers CXK77K36R320GB are series terminated, and output impedance is programmable via the ZQ input pin. By connecting an external control resistor RQ between ZQ and VSS, the impedance of the output drivers can be precisely controlled.

333 MHz operation CXK77K36R320GB is obtained from a single 2.5V power supply. JTAG boundary scan interface is provided using a subset of IEEE standard 1149.1 protocol.




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