CXT3019 Selling Leads, Price trend, CXT3019 DataSheet download, circuit diagram from SeekIC.com

Specifications SYMBOL UNITS Collector-Base Voltage VCBO 140 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 7.0 V Collector Current IC 1.0 mA Power Dissipation PD 1.5 W Junction Temperature TJ,Tstg -65 to +150 °C Thermal Resistance ...

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SeekIC No. : 004319076 Detail

CXT3019: Specifications SYMBOL UNITS Collector-Base Voltage VCBO 140 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 7.0 V Collector Current IC 1.0 mA Pow...

CXT3019 Data Sheet

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Part Number:: CXT3019
Supply Ability:: 5000

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Qty
1~5000

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Negotiable

Processing time
15 Days

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Upload time: 2025/12/4

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Product Details

Description

Specifications

	SYMBOL		UNITS
Collector-Base Voltage	V_CBO	140	V
Collector-Emitter Voltage	V_CEO	80	V
Emitter-Base Voltage	V_EBO	7.0	V
Collector Current	I_C	1.0	mA
Power Dissipation	P_D	1.5	W
Junction Temperature	T_J,T_stg	-65 to +150	°C
Thermal Resistance	_JA	104	°C/W

Description

The CENTRAL SEMICONDUCTOR CXT3019 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general purpose amplifier applications.

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CXT3019

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