CY14B104L

Features: `15 ns, 25 ns, and 45 ns access times` Internally organized as 512K x 8 (CY14B104L) or 256K x 16 (CY14B104N)` Hands off automatic STORE on power down with only a small capacitor` STORE to QuantumTrap® nonvolatile elements initiated by software, device pin or AutoStore® on power d...

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SeekIC No. : 004319096 Detail

CY14B104L: Features: `15 ns, 25 ns, and 45 ns access times` Internally organized as 512K x 8 (CY14B104L) or 256K x 16 (CY14B104N)` Hands off automatic STORE on power down with only a small capacitor` STORE to ...

floor Price/Ceiling Price

Part Number:
CY14B104L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

`15 ns, 25 ns, and 45 ns access times
` Internally organized as 512K x 8 (CY14B104L) or 256K x 16 (CY14B104N)
` Hands off automatic STORE on power down with only a small capacitor
` STORE to QuantumTrap® nonvolatile elements initiated by
    software, device pin or AutoStore® on power down
` RECALL to SRAM initiated by software or power up
` Infinite read, write, and recall cycles
` 8 mA typical ICC at 200 ns cycle time
` 200,000 STORE cycles to QuantumTrap
` 20 year data retention
` Single 3V +20%, 10% operation
` Commercial and industrial temperatures
` FBGA and TSOP - II packages
` RoHS compliance



Pinout

  Connection Diagram


Specifications

Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature .......................... 65°C to +150°C
Ambient Temperature with
Power Applied ..................................... 55°C to +150°C
Supply Voltage on VCC Relative to GND..........0.5V to 4.1V
Voltage Applied to Outputs
in High-Z State.................................... 0.5V to VCC + 0.5V
Input Voltage..........................................0.5V to Vcc+0.5V
Transient Voltage (<20 ns) on
Any Pin to Ground Potential ................ 2.0V to VCC + 2.0V
Package Power Dissipation
Capability (TA = 25°C) ............................................... 1.0W
Surface Mount Pb Soldering
Temperature (3 Seconds)....................................... +260°C
Output Short Circuit Current [7]................................. 15 mA
Static Discharge Voltage......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current................................................... > 200 mA



Description

The Cypress CY14B104L/CY14B104N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K words of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the world's most reliable nonvolatile memory. The SRAM provides infinite read and write cycles, while independent nonvolatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the nonvolatile elements (the STORE operation) takes place automatically at power down. On power up, data is restored to the SRAM (the RECALL operation) from the nonvolatile memory. Both the STORE and RECALL operations are also available under software control.




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