CY27H512

The CY27H512 is a high-performance 512k CMOS EPROM organized in 64K. The features of CY27H512 can be summarized as (1)CMOS for optimum speed/power; (2)high speed: 25ns max; (3)low power: 275mW max, less than 85mW when deselected; (4)byte-wide memory organization; (5)100% reprogrammable in the windowed package; (6)EPROM technology; (7)capable of withstanding>2001V static discharge; (8)available in 32-pin PLCC.

The absolute maximum ratings of the CY27H512 are: (1)storage temperature: -65 to +150; (2)ambient temperature with power applied: -55 to +125; (3)supply voltage to ground potential: -0.5V to +7.0V; (4)DC voltage applied to outputs in high Z state: -0.5V to +5.5V; (5)DC input voltage: -3.0V to +7.0V; (6)transient input voltage: -3.0V for <20ns; (7)DC program voltage: 13.0V.

The following is about the electrical characteristics of CY27H512: (1)output high voltage: 2.4V min at VCC=min, IOH=-4.0mA; (2)output low voltage: 0.45V max at VCC=min, IOH=12.0mA; (3)input high level: 2.0V min and VCC+0.5V max at guaranteed input logical high voltage for all inputs; (4)input low level: 0.8V max at guaranteed input logical high voltage for all inputs; (5)input leakage current: 0.8V max at GNDVINVCC; (6)output leakage current: -10A min and +10A max at GNDVINVCC, output disabled; (7)output short circuit current: --10A min and +10A max at VCC=max, IOUT=0mA, f=10MHz.