DescriptionThe CY7B134 is a high-speed BICMOS 4k*8 dual-port static RAMs. The features of CY7B131 can be summarized as (1)0.8-micron BICMOS for high performance; (2)high-speed accross: 15ns; (3)automatic power-down; (4)fully asynchronous operation; (5)7B1342 includes semaphores; (6)7B134 available...
CY7B134: DescriptionThe CY7B134 is a high-speed BICMOS 4k*8 dual-port static RAMs. The features of CY7B131 can be summarized as (1)0.8-micron BICMOS for high performance; (2)high-speed accross: 15ns; (3)auto...
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The CY7B134 is a high-speed BICMOS 4k*8 dual-port static RAMs. The features of CY7B131 can be summarized as (1)0.8-micron BICMOS for high performance; (2)high-speed accross: 15ns; (3)automatic power-down; (4)fully asynchronous operation; (5)7B1342 includes semaphores; (6)7B134 available in 48-pin DIP.
The absolute maximum ratings of the CY7B134 are: (1)storage temperature: -65 to +150; (2)ambient temperature with power applied: -55 to +125; (3)supply voltage to ground potential: -0.5V to +7.0V; (4)DC voltage applied to outputs in high Z state: -0.5V to +7.0V; (5)DC input voltage: -3.0V to +7.0V.
The following is about the electrical characteristics of CY7B134: (1)output high voltage: 2.4V min at VCC=min, IOH=-4.0mA; (2)output low voltage: 0.4V max at VCC=min, IOH=16.0mA; (3)input high level: 2.2V min; (4)input low level: 0.8V max; (5)input load current: -10A min and +10A max at GNDVIVCC; (6)output leakage current: -10A min and +10A max at GNDVINVCC, output disabled; (7)operating current: 260mA max at VCC=max, IOUT=0mA, output disable; (8)standby current: 110mA max.