CY9C6264

Features:

• 100% form, fit, function compatible with 8K * 8 micropower SRAM CY6264
- Fast Read and Write access: 70 ns
- Voltage range: 4.5V5.5V operation
- Low active power: 330 mW (max.)
- Low standby power, CMOS: 495 µW (max.)
- Easy memory expansion with CE and OE features
- TTL-compatible inputs and outputs
- Automatic power-down when deselected
• Replaces 8K * 8 Battery Backed (BB) SRAM, SRAM, EEPROM, FeRAM, or Flash memory
• Data is automatically Write protected during power loss
• Write cycle endurance: >1015 cycles
• Data Retention: >10 Years
• Shielded from external magnetic fields
• Extra 64-bytes for device identification and tracking
• Temperature ranges
- Commercial: 0°C to 70°C
- Industrial: 40°C to +85°C


Pinout




Specifications

Storage Temperature ...................................................................................................................................65°C to +150°C
Ambient Temperature with Power Applied......................................................................................................40°C to +85°C
Supply Voltage to Ground Potential (Pin 28 to Pin 14) ..................................................................................... 0.5V to +7.0V
DC Voltage Applied to Outputs in High-Z State^[1] .....................................................................................0.5V to V_CC + 0.5V
DC Input Voltage^[1]....................................................................................................................................0.5V to V_CC + 0.5V
except in case of super voltage pin (A7) while accessing 16 device ID and silicon signature bytes. ......... −0.5V to V_CC + 2.5V
Output Current into Outputs (LOW).................................................................................................................................. 20 mA
Static Discharge Voltage................................................................................................................................................ > 2001V
(per MIL-STD-883, Method 3015) Latch-up Current...................................................................................................... > 200 mA
Maximum Exposure to Magnetic Field @ Device Package^{[2, 3]} ........................................................................................ < 20 Oe


Description

The CY9C6264 is a high-performance CMOS nonvolatile RAM employing an advanced magnetic RAM (MRAM) process. An MRAM is nonvolatile memory that operates as a fast read and write RAM. The CY9C6264 provides data retention for more than ten years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM, EEPROM, Flash and FeRAM.  The CY9C6264's fast writes and high write cycle endurance makes it superior to other types of nonvolatile memory.
The CY9C6264 operates very similarly to SRAM devices. Memory read and write cycles require equal times. The MRAM memory is nonvolatile due to its unique magnetic process. Unlike BBSRAM, the CY9C6264 is truly a monolithic nonvolatile memory. It provides the same functional benefits of a fast write without the serious disadvantages associated with modules and batteries or hybrid memory solutions.
These capabilities make the CY9C6264 ideal for nonvolatile memory applications requiring frequent or rapid writes in a byte wide environment.
The CY9C6264 is offered in both commercial and industrial temperature ranges.