CYM1481

Features: • High-density 8-/16-megabit SRAM modules• High-speed CMOS SRAMs -Access time of 70 ns• Low active power -605 mW (max.), 2M x 8• Double-sided SMD technology• TTL-compatible inputs and outputs• Small footprint SIP -PCB layout area of 0.72 sq. in.•...

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CYM1481 Picture
SeekIC No. : 004320632 Detail

CYM1481: Features: • High-density 8-/16-megabit SRAM modules• High-speed CMOS SRAMs -Access time of 70 ns• Low active power -605 mW (max.), 2M x 8• Double-sided SMD technology• ...

floor Price/Ceiling Price

Part Number:
CYM1481
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Description



Features:

• High-density 8-/16-megabit SRAM modules
• High-speed CMOS SRAMs
   -Access time of 70 ns
• Low active power
   -605 mW (max.), 2M x 8
• Double-sided SMD technology
• TTL-compatible inputs and outputs
• Small footprint SIP
    -PCB layout area of 0.72 sq. in.
• 2V data retention (L version)



Pinout

  Connection Diagram


Specifications

(Above which the useful life may be impaired.)
Storage Temperature ........................  55°C to +125°C
Ambient Temperature with
Power Applied.............................................0°C to +70°C
Supply Voltage to Ground Potential ...........0.3V to +7.0V
DC Voltage Applied to Outputs
in High Z State .......................................... 0.3V to +7.0V
DC Input Voltage .......................................0.3V to +7.0V
Output Current into Outputs (LOW)..........................20 mA



Description

The CYM1471 and CYM1481 are high-performance 8-megabit and 16-megabit static RAM modules organized as 1024K words (1471) or 2048K words (1481) by 8 bits. The The CYM1471 and CYM1481are constructed from eight (1471) or sixteen (1481) 128K x 8 SRAMs in plastic surface-mount packages on an epoxy laminate board with pins. On-board decoding selects one of the SRAMs from the high-order address lines, keeping the remaining devices in standby mode for minimum power consumption.

An active LOW write enable signal (WE) controls the writing/ reading operation of the memory. When MS and WE inputs are both LOW, data on the eight data input/output pins is written into the memory location specified on the address pins.

Reading the CYM1471 and CYM1481is accomplished by selecting the device and enabling the outputs MS and OE active LOW while WE remains inactive or HIGH. Under these conditions, the content of the location addressed by the information on the address pins is present on the eight data input/output pins.

The input/output pins of the CYM1471 and CYM1481remain in a high-impedance state unless the CYM1471 or CYM1481 is selected, outputs are enabled, and write enable (WE) is HIGH.




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