CZT5551 Selling Leads, Price trend, CZT5551 DataSheet download, circuit diagram from SeekIC.com

Specifications SYMBOL Units Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6.0 V Collector Current IC 600 mA Power Dissipation PD 2.0 W Operating and Storage Junction Temperature TJ,Tstg -65 to +150 °C ...

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SeekIC No. : 004320826 Detail

CZT5551: Specifications SYMBOL Units Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6.0 V Collector Current IC 600 mA Po...

CZT5551 Data Sheet

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Part Number:: CZT5551
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/4/30

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CZT5338 evaluate
Specifications SYMBOL Units Collector-Base Voltage VCBO 100 Collector-Emitter ...
CZT5401 evaluate
Specifications SYMBOL Units Collector-Base Voltage VCBO 160 V Collector-Emitter...
CZT5551 1000 PC REEL evaluate
Transistors Bipolar (BJT) NPN High Voltage

Product Details

Description

Specifications

	SYMBOL		Units
Collector-Base Voltage	V_CBO	180	V
Collector-Emitter Voltage	V_CEO	160	V
Emitter-Base Voltage	V_EBO	6.0	V
Collector Current	I_C	600	mA
Power Dissipation	P_D	2.0	W
Operating and Storage Junction Temperature	T_J,T_stg	-65 to +150	°C
Thermal Resistance	_JA	62.5	°C/W

Description

The CENTRAL SEMICONDUCTOR CZT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.

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CZT5551

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