Purchase D10AAXXZ4, In-stock D10AAXXZ4 From SeekIC.
MFG:ANAREN Package Cooled:N/A D/C:N/A
- Table of contents:
D10AAXXZ4
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Suppliers
DataSheet
General Description
D10
PDF/DataSheet Download
- Datasheet: D10
- File Size: 1193253 KB
- Manufacturer: STMicroelectronics
- Click here to Download
- ·D1001UK
- SEME-LAB [Seme LAB]
- GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 28V - 175MHz SINGLE ENDED
- 44460 KB
- ·D1002UK
- SEME-LAB [Seme LAB]
- METAL GATE RF SILICON FET
- 42094 KB
- ·D1003UK
- SEME-LAB [Seme LAB]
- METAL GATE RF SILICON FET
- 40740 KB
- ·D1004
- SEME-LAB [Seme LAB]
- METAL GATE RF SILICON FET
- 36368 KB
- ·D1004UK
- SEME-LAB [Seme LAB]
- METAL GATE RF SILICON FET
- 36368 KB
- ·D1005
- SEME-LAB [Seme LAB]
- METAL GATE RF SILICON FET
- 37369 KB
- ·D1005UK
- SEME-LAB [Seme LAB]
- METAL GATE RF SILICON FET
- 37369 KB
- ·D1006UK
- SEME-LAB [Seme LAB]
- METAL GATE RF SILICON FET
- 61119 KB
D10AAXXZ4 Relative Products
D10AA2Z4
The D10AAXXZ4 is high performance Alumina (Al2O3) surface mount attenuator intended as a lower cost alternative to Aluminum Nitride (AlN) and Beryllium Oxide (BeO). The attenuator,theD10AAXXZ4is well suited to all cellular frequency bands such as; AMPS, GSM,...
D10AA1Z4
The D10AAXXZ4 is high performance Alumina (Al2O3) surface mount attenuator intended as a lower cost alternative to Aluminum Nitride (AlN) and Beryllium Oxide (BeO). The attenuator,D10AAXXZ4 is well suited to all cellular frequency bands such as; AMPS, GSM, D...
D1094UK
The ceramic portion of the D1094UK between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area.
D1093UK
The ceramic portion of the D1093UK between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area.
D1084UK
D1083UK
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