Purchase D2029UK, In-stock D2029UK From SeekIC.
- Table of contents:
D2029UK
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Suppliers
DataSheet
General Description
D2029UK Maximum Ratings
PD Power Dissipation...................................................17.5W
BVDSS Drain- Source Breakdown Voltage* .........................65V
BVGSS Gate- Source Breakdown Voltage * .......................±20V
ID(sat) Drain Current * ...........................................................1A
Tstg Storage Temperature................................. -65 to 150°C
Tj Maximum Operating Junction Temperature........... 200°C
BVDSS Drain- Source Breakdown Voltage* .........................65V
BVGSS Gate- Source Breakdown Voltage * .......................±20V
ID(sat) Drain Current * ...........................................................1A
Tstg Storage Temperature................................. -65 to 150°C
Tj Maximum Operating Junction Temperature........... 200°C
D2029UK Features
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
VERY LOW Crss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN - 13 dB MINIMU
SUITABLE FOR BROAD BAND APPLICATIONS
VERY LOW Crss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN - 13 dB MINIMU
D2029UK Typical Application
HF/VHF/UHF COMMUNICATIONS from 1 MHz to 2 GHz
D2029UK
PDF/DataSheet Download
- Datasheet: D2029UK
- File Size: 15809 KB
- Manufacturer: SEME-LAB [Seme LAB]
- Click here to Download
- ·D20
- STMicroelectronics
- MEMORY MICROMODULES GENERAL INFORMATION FOR D1, D2 AND C PACKAGING
- 1193253 KB
- ·D2001UK
- SEME-LAB [Seme LAB]
- METAL GATE RF SILICON FET
- 48599 KB
- ·D2002
- SEME-LAB [Seme LAB]
- METAL GATE RF SILICON FET
- 15827 KB
- ·D2002UK
- SEME-LAB [Seme LAB]
- METAL GATE RF SILICON FET
- 15827 KB
- ·D2003
- SEME-LAB [Seme LAB]
- METAL GATE RF SILICON FET
- 61970 KB
- ·D2003UK
- SEME-LAB [Seme LAB]
- METAL GATE RF SILICON FET
- 61970 KB
- ·D2004UK
- SEME-LAB [Seme LAB]
- METAL GATE RF SILICON FET
- 53205 KB
- ·D2005
- SEME-LAB [Seme LAB]
- METAL GATE RF SILICON FET
- 15825 KB
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