Transistor Polarity
: NPN
Configuration
: Single
Maximum Operating Temperature
: + 150 C
Mounting Style
: Through Hole
Emitter- Base Voltage VEBO
: 5 V
Package / Case
: TO-220AB
Packaging
: Tube
Collector- Emitter Voltage VCEO Max
: 80 V
Maximum Operating Frequency
: 50 MHz
DC Collector/Base Gain hfe Min
: 60
Maximum DC Collector Current
: 10 A
DescriptionThe D44H11G is a kind of complementary silicon power transistors and these series of plastic, silicon NPN and PNP power transistors can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers.
The features of D44H11G can be summarized as (1)low collector emitter saturation voltage VCE(sat) = 1.0 V (Max) @ 8.0 A; (2)fast switching speeds; (3)complementary pairs simplifies designs; (4)pb-free packages are available.
The absolute maximum ratings of D44H11G are (1)VCEO collector-emitter voltage D44H8, D45H8/D44H11, D45H11: 60/80Vdc; (2)VEB emitter base voltage: 5.0 Vdc; (3)IC collector current continuous/peak: 10/20Adc; (4)PD total power dissipation @ TC = 25°C/@ TA = 25°C: 70/2.0W; (5)operating and storage junction and temperature range TJ, Tstg: -55 to +150 °C.
Parameters: | Technical/Catalog Information | D44H11G |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 80V |
| Current - Collector (Ic) (Max) | 10A |
| Power - Max | 70W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 2A, 1V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 400mA, 8A |
| Frequency - Transition | 50MHz |
| Current - Collector Cutoff (Max) | 10A |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 (Straight Leads) |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | D44H11G
D44H11G
D44H11GOS ND
D44H11GOSND
D44H11GOS
|
D44H11G Data Sheet
