D45C11

Emitter- Base Voltage VEBO :
Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Maximum DC Collector Current : 4 A
Collector- Emitter Voltage VCEO Max : 80 V
Packaging : Bulk
DC Collector/Base Gain hfe Min : 40
Package / Case : TO-220
Maximum Operating Frequency : 32 MHz


Features:

This device is designed for power amplifier, regulator and switchingcircuits where speed is important. Sourced from Process 5P. SeeNZT751 for characteristics.




Specifications

Symbol	Parameter	Value	Units
VCEO	Collector-Emitter Voltage	80	V
IC	Collector Current - Continuous	v	A
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.




Parameters:

Technical/Catalog Information	D45C11
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	4A
Power - Max	60W
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 200mA, 1V
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 1A
Frequency - Transition	32MHz
Current - Collector Cutoff (Max)	10A
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	D45C11 D45C11