D45H2A

Emitter- Base Voltage VEBO :
DC Collector/Base Gain hfe Min : 100
Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Packaging : Tube
Maximum DC Collector Current : 8 A
Collector- Emitter Voltage VCEO Max : 30 V
Package / Case : TO-220
Maximum Operating Frequency : 25 MHz


Features:

• This device is designed for power amplifier, regulator and switching circuits where speed is important.
• Sourced from process 5Q.


Specifications

Symbol	Parameter	Value	Units
VCEO	Collector-Emitter Voltage	30	V
IC	Collector Current - Continuous	8.0	A
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150	°C

Parameters:

Technical/Catalog Information	D45H2A
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	30V
Current - Collector (Ic) (Max)	8A
Power - Max	60W
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 8A, 5V
Vce Saturation (Max) @ Ib, Ic	1V @ 400mA, 8A
Frequency - Transition	25MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	D45H2A D45H2A