D758N

The D758N is designed as one kind of power rectifier diodes.

Some absolute maximum ratings of D758N have been concluded into several points as follow. (1)Its repetitive peak reverse voltage would be 200V, 400V, 600V, 800V (delivery on request). (2)Its non-repetitive peak reverse voltage would be +50V. (3)Its RMS forward current would be 1195A. (4)Its mean forward current would be 760A at Tc=115°C and would be 630A at Tc=130°C. (5)Its surge forward current would be 10.3kA at Tvj=25°C and tp=10ms and it would be 8.8kA at Tvj=Tvjmax and tp=10ms. (6)Its I2t value would be 530.45kA2s at Tvj=25°C and tp=10ms and it would be 387.2kA2s at Tvj=Tvjmax and tp=10ms. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of D758N are concluded as follow. (1)Its on-state voltage would be max 1.45V with test conditions of Tvj=Tvjmax, iF=2.3kA. (2)Its threshold would be 0.7V with test conditions of Tvj=Tvjmax. (3)Its slope resistance would be 0.31m with test conditions of Tvj=Tvjmax. (4)Its reverse current would be max 20mA with test conditions of Tvj=Tvjmax and Vr=Vrrm. (5)Its thermal resistance junction to case would be max 0.067°C/W two sided =180° sin Rthjc and it would be max 0.063°C/W for two sided DC and it would be max 0.104°C/W for anode =180° sin and it would be max 0.100°C/W for anode DC and it would be max 0.174°C/W for cathode =180° sin and it would be max 0.170°C/W for cathode DC. (6)Its thermal resistance case to heatsink would be max 0.015°C/W for two sided and would be max 0.030°C/W for single sided. (7)Its max junction temperature would be max 180°C. (8)Its operating temperature range would be from -40°C to 150°C. (9)Its storage temperature range would be from -40°C to 150°C. (10)Its vibration resistance would be max 50m/s2. And so on. If you have any question or suggestion or want to know more information please contact us for details on D758N. Thank you!