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DBES105A

Features: *High cut-off frequencies : 3THz*High breakdown voltage : < -5V @ 20µA*Good ideality factor : 1.2*Low parasitic inductances*Low cost technologyVDimensions : 0.53 x 0.23 x 0.1mmSpecifications Symbol Parameter Typ. values Unit Vak Reverse anode-cathode voltage ...

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SeekIC No. : 004324079 Detail

DBES105A: Features: *High cut-off frequencies : 3THz*High breakdown voltage : < -5V @ 20µA*Good ideality factor : 1.2*Low parasitic inductances*Low cost technologyVDimensions : 0.53 x 0.23 x 0.1mmSpe...

DBES105A Data Sheet

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Part Number:
DBES105A
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

*High cut-off frequencies : 3THz
*High breakdown voltage : < -5V
  @ 20µA
*Good ideality factor : 1.2
*Low parasitic inductances
*Low cost technology
VDimensions : 0.53 x 0.23 x 0.1mm


Specifications

Symbol

Parameter

Typ. values

Unit

Vak Reverse anode-cathode voltage -5 V
Iak Forward anode-cathode current 10 mA



Description

 The DBES105A is a dual Schottky diode based on a low cost 1µm stepper process including a bump technology. The parasitic inductances are reduced and result in a very high operating frequency.

 DBES105A, this flip-chip dual diode has been designed for high performance mixer applications.




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