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DE150-201N09A

Transistors RF MOSFET Power MOSFET RF POWER

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SeekIC No. : 00219521 Detail

DE150-201N09A: Transistors RF MOSFET Power MOSFET RF POWER

DE150-201N09A Data Sheet

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Part Number:
DE150-201N09A
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Frequency : 1 MHz to 100 MHz Drain-Source Breakdown Voltage : 200 V
Continuous Drain Current : 15 A Gate-Source Breakdown Voltage : +/- 20 V
Maximum Operating Temperature : + 125 C Package / Case : DE475    

Description

Gain :
Output Power :
Packaging :
Configuration : Single
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Drain-Source Breakdown Voltage : 200 V
Frequency : 1 MHz to 100 MHz
Continuous Drain Current : 15 A
Maximum Operating Temperature : + 125 C
Package / Case : DE475


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