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DE275X2-501N16A

Features: • Isolated Substrate− high isolation voltage (>2500V)− excellent thermal transfer− Increased temperature and power cycling capability• IXYS advanced low Qg process• Low gate charge and capacitances− easier to drive− faster switching̶...

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DE275X2-501N16A: Features: • Isolated Substrate− high isolation voltage (>2500V)− excellent thermal transfer− Increased temperature and power cycling capability• IXYS advanced low Qg...

DE275X2-501N16A Data Sheet

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Part Number:
DE275X2-501N16A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
  cycling capability
• IXYS advanced low Qg process
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low RDS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other
  hazardous materials


Specifications

Symbol Test Conditions Maximum Ratings
VDSS TJ = 25°C to 150°C 500 V
VDGR TJ = 25°C to 150°C; RGS = 1 M 500 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 Tc = 25°C 16 A
IDM Tc = 25°C, pulse width limited by TJM 96 A
IAR Tc = 25°C 16 A
EAR Tc = 25°C 20 mJ
dv/dt IS IDM, di/dt 100A/s, VDD VDSS,
Tj 150°C, RG = 0.2
IS = 0		 5
>200		 V/ns
V/ns
PDHS(1) Tc = 25°C, Derate 6.0W/°C above 25°C 750 W
PDAMB(1) Tc = 25°C 5.0 W
RthJHS(1)   0.17 K/W
TJ   -55…+150 °C
TJM   150 °C
Tstg   -55…+150 °C
TL 1.6mm (0.063 in) from case for 10 s 300 °C



Description

The DE275X2-501N16A is a matched pair of RF power MOSFET devices in a common source configuration. The DE275X2-501N16A is optimized for push-pull or  parallel operation in RF generators and amplifiers at frequencies to >65 MHz.




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