DG200 General Description
The DG200 and DG201 solid state analog gates are designed using an improved, high voltage CMOS monolithic technology. They provide ease-of-use and performance advantages not previously available from solid state switches. Destructive latch-up of solid state analog gates has been eliminated by Harris's CMOS technology.
The DG200 and DG201 are completely specification and pinout compatible with the industry standard devices.
DG200 Maximum Ratings
V+, V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <36V
V+ - VD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <30V
VD - V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <30V
VD - VS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <28V
VIN - GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <20V
Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +150
Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300
DG200 Features
• Switches Greater than 28VP-P Signals with ±15 Supplies
• Break-Before-Make Switching tOFF 250ns, tON 700ns Typical
• TTL, DTL, CMOS, PMOS Compatible
• Non-Latching with Supply Turn-Off
• Complete Monolithic Construction
• Industry Standard (DG200, DG201)
DG200 Typical Application
• Data Acquisition
• Sample and Hold Circuits
• Operational Amplifier Gain Switching Networks
Map list: ABCDEFGHIJKLMNOPQRSTUVWXYZ 0123456789All