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Package Cooled:SSOP-2  D/C:98+  

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Part Number: DG613

 

 

Package Cooled: SSOP-2

D/C: 98+

Description: The DG611/612/613 feature high-speed low-capacitance lateral DMOS switches. Charge injection has been minimized to o...


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DG613 General Description


The DG611/612/613 feature high-speed low-capacitance lateral DMOS switches. Charge injection has been minimized to optimize performance in fast sample-and-hold applications.

Each switch conducts equally well in both directions when on and blocks up to 16 Vp-p when off. Capacitances have been minimized to ensure fast switching and low-glitch energy. To achieve such fast and clean switching performance, the DG611/612/613 are built on the Vishay Siliconix proprietary D/CMOS process. This process combines n-channel DMOS switching FETs with low-power CMOS control logic and drivers. An epitaxial layer prevents latchup.

DG613 Maximum Ratings

V+ to V . . . . . . . . . . . . . . . . . . . .  . . . . . . . . . . . . . . . 0.3 V to 21 V
V+ to GND . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . 0.3 V to 21 V
V to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 V to 0.3 V
VL to GND . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . 1 V to (V+) + 1 V
or 20 mA, whichever occurs first
VINa . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . (V) 1 V to (V+) + 1 V
or 20 mA, whichever occurs first
VS, VDa . . . . . . . . . . . . . . .  . . .  . . . . . . . . (V) 0.3 V to (V) + 16 V
or 20 mA, whichever occurs first
Continuous Current (Any Terminal) . . . . . . . . . . . . .  . . . . . . . ±30 mA
Current, S or D (Pulsed at 1 s, 10% Duty Cycle) .  . . . . . . .±100 mA
Storage Temperature: CerDIP . . . . . . . . . . . . . ... . . . . . 65 to 150
                                    Plastic . . . . . . . . . . . . . . . . . .. . . 65 to 125
Power Dissipation (Package)b
16-Pin Plastic DIPc . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . 470 mW
16-Pin Narrow SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mW
16-Pin CerDIPe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW
20-Pin LCCe . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . 900 mW
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6 mW/ above 75
d. Derate 7.6 mW/ above 75
e. Derate 12 mW/ above 75

DG613 Features

 Fast Switching- tON: 12 ns
 Low Charge Injection:±2 pC
 Wide Bandwidth: 500 MHz
 5-V CMOS Logic Compatible
 Low rDS(on): 18
 Low Quiescent Power : 1.2 nW
 Single Supply Operation

DG613 Typical Application

 Fast Sample-and-Holds
 Synchronous Demodulators
 Pixel-Rate Video Switching
 Disk/Tape Drives
 DAC Deglitching
 Switched Capacitor Filters
 GaAs FET Drivers
 Satellite Receivers

DG613 Connection Diagram

DG613 Connection DiagramDG613 Connection Diagram

DG613 datasheet

DG613
PDF/DataSheet Download

Find DG613 Suppliers

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  • ·DG612AZ/883
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