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DG92623

Features: `Low Voltage Operation (+2.7 to +5 V)`Low On-Resistance - rDS(on): 40`Fast Switching - tON : 35 ns, tOFF: 20 ns` Low Leakage - ICOM(on): 200-pA max` Low Charge Injection - QINJ: 1 pC` Low Power Consumption` TTL/CMOS Compatible` ESD Protection > 2000 V (Method 3015.7)` Available in TSS...

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SeekIC No. : 004326339 Detail

DG92623: Features: `Low Voltage Operation (+2.7 to +5 V)`Low On-Resistance - rDS(on): 40`Fast Switching - tON : 35 ns, tOFF: 20 ns` Low Leakage - ICOM(on): 200-pA max` Low Charge Injection - QINJ: 1 pC` Low ...

DG92623 Data Sheet

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Part Number:
DG92623
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`  Low Voltage Operation (+2.7 to +5 V)
`  Low On-Resistance - rDS(on): 40
`  Fast Switching - tON : 35 ns, tOFF: 20 ns
`  Low Leakage - ICOM(on): 200-pA max
` Low Charge Injection - QINJ: 1 pC
` Low Power Consumption
` TTL/CMOS Compatible
` ESD Protection > 2000 V (Method 3015.7)
` Available in TSSOP-8 and SOIC-8


Application

·Battery Operated Systems
·Portable Test Equipment
·Sample and Hold Circuits
·Cellular Phones
·Communication Systems
·Military Radio
·PBX, PABX Guidance and Control Systems


Specifications

Reference to GND
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . .. . . -0.3 to +13 V
IN, COM, NC, NOa . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V)
Continuous Current (Any terminal) . . . . . . . . . . . . . . . . . . . . . . . 20 mA
Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . 40 mA
(Pulsed at 1ms, 10% duty cycle)
ESD (Method 3015.7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . > 2000 V
Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . .. . . -65 to 125°C
Power Dissipation (Packages)b
8-Pin Narrow Body SOICc . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . 400 mW
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6.5 mW/C above 75C


Description

The DG9262/DG92623 is a single-pole/single-throw monolithic CMOS analog device designed for high performance switching of analog signals. Combining low power, high speed (tON: 35 ns, tOFF: 20 ns), low on-resistance (rDS(on): 40) and small physical size, the DG9262/DG92623 is ideal for portable and battery powered applications requiring high performance and efficient use of board space.

The DG9262/DG92623 is built on Vishay Siliconix's low voltage BCD-15 process. Minimum ESD protection, per Method 3015.7 is 2000 V. An epitaxial layer prevents latchup. Break-before
-make is guaranteed for DG9262/DG92623.

Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off.




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