MOSFET MOSFET COMP NPN
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Features: *Memory mapped I/O*Program memory : 8192 x 10bits*Data memory : 512 x 4bits*Instructions...
| Transistor Polarity : | N and P-Channel | Drain-Source Breakdown Voltage : | 40 V, -40 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 7.5 A, -7.5 A | ||
| Resistance Drain-Source RDS (on) : | 25 mOhms at 10 V, 25 mOhms at -10 V | Configuration : | Dual | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | SO-8 | Packaging : | Reel |