DME 500

SpecificationsMaximum Power Dissipation @ 252............................. 1700 WattsMaximum Voltage and CurrentBVces Collector to Base Voltage...................................... 55 VoltsBVebo Emitter to Base Voltage..........................................3.5 VoltsIc Collector Current...........

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SeekIC No. : 004327472 Detail

DME 500: SpecificationsMaximum Power Dissipation @ 252............................. 1700 WattsMaximum Voltage and CurrentBVces Collector to Base Voltage...................................... 55 VoltsBVebo Em...

floor Price/Ceiling Price

Part Number:
DME 500
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Specifications

Maximum Power Dissipation @ 25 ............................. 1700 Watts
Maximum Voltage and Current
BVces      Collector to Base Voltage ...................................... 55 Volts
BVebo     Emitter to Base Voltage..........................................3.5 Volts
Ic             Collector Current ...................................................40 Amps
Maximum Temperatures
Storage Temperature .................................................- 65 to + 200
Operating Junction Temperature.............................................+ 200          
       



Description

The DME 500 is a high power COMMON BASE bipolar transistor.  It is designed for pulsed systems in the frequency band 1025-1150 MHz.  The device has gold thin-film metallization for proven highest MTTF.  The DME 500 transistor includes input and output  prematch for broadband capability.   Low thermal resistance package reduces junction temperature, extends life.


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