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DMN601DWK

Features: Dual N-Channel MOSFETLow On-ResistanceLow Gate Threshold VoltageLow Input CapacitanceFast Switching Speed Low Input/Output LeakageUltra-Small Surface Mount PackageLead Free By Design/RoHS Compliant (Note 2)ESD Protected Up To 2kV Green Device (Note 4)Specifications Part Number DM...

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SeekIC No. : 004327688 Detail

DMN601DWK: Features: Dual N-Channel MOSFETLow On-ResistanceLow Gate Threshold VoltageLow Input CapacitanceFast Switching Speed Low Input/Output LeakageUltra-Small Surface Mount PackageLead Free By Design/RoHS ...

DMN601DWK Data Sheet

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Part Number:
DMN601DWK
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 2)
ESD Protected Up To 2kV
"Green" Device (Note 4)




Specifications

Part Number DMN601DWK
Config/
Polarity		 2 x N
PD
(W)		 0.2
VDSS
(V)		 60
VGSS (+/-)
(V)		 20
ID
(A)		 0.305
RDS(on) Max () @ VGS; 1.8V
RDS(on) Max () @ VGS; 2.5V
RDS(on) Max () @ VGS; 4.0V
RDS(on) Max () @ VGS; 4.5V
RDS(on) Max () @ VGS; 5V 3
RDS(on) Max () @ VGS; 10.0V 2
VGS(th)
(V)		 2.5
Ciss (typ)
(pF)		 50(Max)
Qg (typ) (nC)
@ VGS; 4.5V
Qg (typ) (nC)
@ VGS; 5V
Qg (typ) (nC)
@ VGS; 10V


Characteristic Symbol Value
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGSS ±20 V
Drain Current (Note 1) ContinuousPulsed (Note3) ID 305
800		 mA
Total Power Dissipation (Note 1) Pd 200 mW
Thermal Resistance, Junction to Ambient RJA 625 /W
Operating and Storage Temperature Range Tj,TSTG -65 to +150






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