DP100S

Features: Extremely low collector-to-emitter saturation voltage( V CE(SAT) = -0.25V Typ. @IC /IB =-400mA/-20mA)Suitable for low voltage large current driversComplementary pair with DN100SSwitching ApplicationPinoutSpecifications Characteristic Symbol Ratings Unit Collector-B...

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DP100S Picture
SeekIC No. : 004327894 Detail

DP100S: Features: Extremely low collector-to-emitter saturation voltage( V CE(SAT) = -0.25V Typ. @IC /IB =-400mA/-20mA)Suitable for low voltage large current driversComplementary pair with DN100SSwitching A...

floor Price/Ceiling Price

Part Number:
DP100S
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/22

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Product Details

Description



Features:

Extremely low collector-to-emitter saturation voltage( V CE(SAT) = -0.25V Typ. @IC /IB =-400mA/-20mA)
Suitable for low voltage large current drivers
Complementary pair with DN100S
Switching Application





Pinout






Specifications



Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
VCBO
-15
V
Collector-Emitter voltage
VCEO
-12
V
Emitter-Base voltage
VEBO
-5
V
Collector current
IC
-1
A
Collector dissipation
PC
200
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55~150





Description

Bipolar transistors DP100S, also called junction type transistors, are a kind of transistors. Unlike field-effect transistors (unipolar transistors), DP100S are called bipolar because DP100S have two kinds of carriers (hole, electron)




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